KTD1347_15 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
VOLTAGE REGULATORS, RELAY DRIVERS
LAMP DRIVERS, ELECTRICAL EQUIPMENT
FEATURES
ᴌAdoption of MBIT processes.
ᴌLow collector-to-emitter saturation voltage.
ᴌFast switching speed.
ᴌLarge current capacity and wide ASO.
ᴌComplementary to KTB985.
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Vollector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Power Dissipation
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
I_CP
P_C
T_j
Storage Temperature Range
T_stg
RATING
60
50
6
3
6
1
150
-55ᴕ150
UNIT
V
V
V
A
A
W
á´±
á´±
KTD1347
EPITAXIAL PLANAR NPN TRANSISTOR
B
D
P
DEPTH:0.2
C
Q
K
F
F
H
H
M
E
123
HL
N
N
1. EMITTER
2. COLLECTOR
3. BASE
DIM MILLIMETERS
A
7.20 MAX
B
5.20 MAX
S
C
0.60 MAX
D
2.50 MAX
E
1.15 MAX
F
1.27
G
1.70 MAX
H
0.55 MAX
J
14.00+_ 0.50
H
K
L
0.35 MIN
0.75+_ 0.10
M
4
N
25
O
1.25
P
Φ1.50
Q
0.10 MAX
R
12.50 +_ 0.50
S
1.00
TO-92L
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
I_CBO
I_EBO
h_FE (1) (Note)
h_FE (2)
V_CE(sat)
V_BE(sat)
f_T
C_ob
V_CB=40V, I_E=0
V_EB=4V, I_C=0
V_CE=2V, I_C=100Ὠ
V_CE=2V, I_C=3A
I_C=2A, I_B=100Ὠ
I_C=2A, I_B=100Ὠ
V_CE=10V, I_C=50Ὠ
V_CB=10V, I_E=0, f=1á½²
Turn-on Time
t_on
Switching
Time
Storage Time
t_stg
PDWC =<=210%µs _{I B1}
INPUT
VR
50
R8
I _B2
100µ
25
470µ
Fall Time
t_f
-5V
25V
10I_B1=-10I_B2 =I _C=1A
Note : h_FE (1) Classification A:100ᴕ200, B:140ᴕ280, C:200ᴕ400
MIN.
-
-
100
35
-
-
-
-
TYP. MAX. UNIT.
-
1
ὧ
-
1
ὧ
-
400
-
-
0.19 0.5
V
0.94 1.2
V
150
-
á½²
25
-
ὸ
-
70
-
-
650
-
nS
-
35
-
1999. 11. 30
Revision No : 1
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