KTD1304_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SEMICONDUCTOR
TECHNICAL DATA
AUDIO MUTING APPLICATION.
FEATURES
hHigh Emitter-Base Voltage : V_EBO=12V(Min.).
hHigh Reverse h_FE
: Reverse h_FE=20(Min.) (V_CE=2V, I_C=4mA).
hLow on Resistance : R_ON=0.6ʃ(Max.) (I_B=1mA).
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
Storage Temperature Range
T_stg
RATING
25
20
12
300
30
200
150
-55q150
UNIT
V
V
V
mA
mA
mW


KTD1304
EPITAXIAL PLANAR NPN TRANSISTOR
E
L BL
DIM MILLIMETERS
A
2.93+_ 0.20
B 1.30+0.20/-0.15
2
3
C
1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1
G
1.90
H
0.95
J 0.13+0.10/-0.05
K
0.00 ~ 0.10
Q
P
P
L
0.55
M
0.20 MIN
N 1.00+0.20/-0.10
P
7
Q
0.1 MAX
M
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
Marking
MAX ^{Type Name}
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
I_CBO
Emitter Cut-off Current
I_EBO
DC Current Gain
h_FE1 (FOR)
h_FE2 (REV)
Collector-Emitter Saturation Voltage
V_CE(sat)
Base-Emitter Saturation Voltage
V_BE(sat)
Transition Frequency
f_T
Collector Output Capacitance
C_ob
On Resistance
R_on
TEST CONDITION
V_CB=25V, I_E=0
V_EB=12V, I_C=0
V_CE=2V, I_C=4mA
V_CE=2V, I_C=4mA
I_C=100mA, I_B=10mA
I_C=100mA, I_B=10mA
V_CE=10V, I_C=1mA
V_CB=10V, I_E=0, f=1MHz
f=1KHz, I_B=1mA, V_in=0.3V
MIN.
-
-
200
20
-
-
-
-
-
TYP.
-
-
-
-
-
-
60
10
0.6
MAX.
0.1
0.1
800
-
0.25
1
-
-
-
UNIT
ǺA
ǺA
V
V
MHz
pF
ʃ
2011. 6. 29
Revision No : 3
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