KTD1302_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SEMICONDUCTOR
TECHNICAL DATA
AUDIO MUTING APPLICATION.
FEATURES
ᴌHigh Emitter-Base Voltage : V_EBO=12V(Min.).
ᴌHigh Reverse h_FE
: Reverse h_FE=20(Min.) (V_CE=2V, I_C=4mA).
ᴌLow on Resistance :R_ON=0.6ή(Typ.) (I_B=1mA).
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
Storage Temperature Range
T_stg
RATING
25
20
12
300
30
625
150
-55ᴕ150
UNIT
V
V
V
mA
mA
mW
á´±
á´±
KTD1302
EPITAXIAL PLANAR NPN TRANSISTOR
B
C
K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
I_CBO
I_EBO
h_FE(1) (FOR)
h_FE(2) (REV)
V_CE(sat)
V_BE(sat)
f_T
C_ob
On Resistance
R_on
TEST CONDITION
V_CB=25V, I_E=0
V_EB=12V, I_C=0
V_CE=2V, I_C=4mA
V_CE=2V, I_C=4mA
I_C=100mA, I_B=10mA
I_C=100mA, I_B=10mA
V_CE=10V, I_C=1mA
V_CB=10V, I_E=0, f=1MHz
f=1KHz, I_B=1mA, V_IN=0.3V
MIN.
-
-
200
20
-
-
-
-
-
TYP.
-
-
-
-
-
-
60
10
0.6
MAX.
0.1
0.1
800
-
0.25
1.0
-
-
-
UNIT
ỌA
ỌA
V
V
MHz
pF
á½µ
1995. 10. 17
Revision No : 0
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