KTD1047_15 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – TRIPLE DIFFUSED NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
FEATURES
ᴌComplementary to KTB817.
ᴌRecommended for 60W Audio Frequency
Amplifier Output Stage.
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Collector Power Dissipation (Tc=25á´±)
Junction Temperature
Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CP
P_C
T_j
T_stg
RATING
160
140
6
12
15
100
150
-55ᴕ150
UNIT
V
V
V
A
W
á´±
á´±
KTD1047
TRIPLE DIFFUSED NPN TRANSISTOR
A
Q
B
K
D
d
PP
1 23
1. BASE
DIM MILLIMETERS
A
15.9 MAX
B
4.8 MAX
C
20.0+_ 0.3
D
2.0+_ 0.3
d
1.0+0.3/-0.25
E
2.0
F
1.0
G
3.3 MAX
H
9.0
I
4.5
T
MJ
2.0
K
1.8 MAX
L
20.5+_ 0.5
M
2.8
P
5.45+_ 0.2
Q
Φ3.2+_ 0.2
T
0.6+0.3/-0.1
2. COLLECTOR (HEAT SINK)
3. EMITTER
TO-3P(N)
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Output Capacitance
Turn On Time
Fall Time
I_CBO
I_EBO
h_FE (1) (Note)
h_FE 2
V_CE(sat)
V_BE(ON)
f_T
C_ob
t_on
t_f
Storage Time
t_stg
Note : h_FE(1) Classification O:60ᴕ120, Y:100ᴕ200
TEST CONDITION
V_CB=80V, I_E=0
V_EB=4V, I_C=0
V_CE=5V, I_C=1A
V_CE=5V, I_C=6A
I_C=5A, I_B=0.5A
V_CE=5V, I_C=1A
V_CE=5V, I_C=1A
V_CB=10V, I_E=0, f=1MHz
V_CC=20V
I_C=1A=10ᴌI_B1=-10ᴌI_B2
R_L=20á½µ
MIN.
-
-
60
20
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
15
210
0.26
0.68
6.88
MAX.
0.1
0.1
200
UNIT
mA
mA
2.5
V
1.5
V
-
MHz
-
pF
-
-
ỌS
-
1999. 11. 16
Revision No : 1
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