KTD1047B_15 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – TRIPLE DIFFUSED NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
FEATURES
hComplementary to KTB817B.
hRecommended for 60W Audio Frequency
Amplifier Output Stage.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Collector Power Dissipation (Tc=25)
Junction Temperature
Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CP
P_C
T_j
T_stg
RATING
160
140
6
12
15
100
150
-55q150
UNIT
V
V
V
A
W


KTD1047B
TRIPLE DIFFUSED NPN TRANSISTOR
A
N
Q
O
D
E
d
PP
123
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
B
K
DIM MILLIMETERS
A 15.60 +_ 0.20
B 4.80 +_ 0.20
C 19.90 +_ 0.20
D 2.00 +_ 0.20
d
1.00 +_ 0.20
E
3.00 +_ 0.20
F
3.80 +_ 0.20
G 3.50 +_ 0.20
H 13.90 +_ 0.20
I 12.76 +_ 0.20
J 23.40 +_ 0.20
M _{K 1.5+0.15-0.05}
L 16.50 +_ 0.30
M 1.40 +_ 0.20
T
N 13.60 +_ 0.20
O
9.60 +_ 0.20
P
5.45 +_ 0.30
Q
3.20 +_ 0.10
R 18.70 +_ 0.20
T 0.60+0.15-0.05
TO-3P(N)-E
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
I_CBO
Emitter Cut-off Current
I_EBO
DC Current Gain
h_FE (1) (Note)
h_FE 2
Collector-Emitter Saturation Voltage
V_CE(sat)
Base-Emitter Voltage
V_BE(ON)
Transition Frequency
f_T
Output Capacitance
C_ob
Turn On Time
t_on
Fall Time
t_f
Storage Time
t_stg
Note : h_FE(1) Classification O:60q120, Y:100q200
TEST CONDITION
V_CB=80V, I_E=0
V_EB=4V, I_C=0
V_CE=5V, I_C=1A
V_CE=5V, I_C=6A
I_C=5A, I_B=0.5A
V_CE=5V, I_C=1A
V_CE=5V, I_C=1A
V_CB=10V, I_E=0, f=1MHz
V_CC=20V
I_C=1A=10hI_B1=-10hI_B2
R_L=20ʃ
MIN.
-
-
60
20
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
15
210
0.26
0.68
6.88
MAX.
0.1
0.1
200
2.5
1.5
-
-
-
-
-
UNIT
mA
mA
V
V
MHz
pF
ǺS
2011. 3. 18
Revision No : 0
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