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KTD1028_08 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR
SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURES
High DC Current Gain
: hFE=800 3200 (VCE=5.0V, IC=300mA).
Wide Area of Safe Operation.
Low Collector Saturation Voltage.
: VCE(sat)=0.17V (IC=500mA, IB=5.0mA).
KTD1028
EPITAXIAL PLANAR NPN TRANSISTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
RATING
60
50
8
1.0
200
1
150
-55 150
UNIT
V
V
V
A
mA
W
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
ICBO
VCB=60V, IE=0
Emitter Cut-off Current
IEBO
VEB=8V, IC=0
DC Current Gain
hFE(1) (Note)
hFE(2)
VCE=5.0V, IC=300mA
VCE=5.0V, IC=1.0A
Collector-Emitter Saturration Voltage
VCE(sat)
IC=500mA, IB=5.0mA
Base-Emitter Saturation Voltage
Collector Output Capacitance
Transition Frequency
VBE(sat)
Cob
fT
IC=500mA, IB=5.0mA
VCB=10V, IE=0, f=1.0MHz
VCE=10V, IC=500mA
Base-Emitter Voltage
VBE
VCE=5V, IC=100mA
Note: hFE Classification A:800 1600, B:1200 2400, C:2000 3200
MIN.
-
-
800
400
-
-
-
150
-
TYP.
-
-
1500
-
0.17
0.80
18
250
630
MAX.
100
100
3200
-
0.30
1.2
30
-
700
UNIT
nA
nA
V
V
pF
MHz
mV
2008. 3. 11
Revision No : 3
1/2
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