KTD1003_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURES
ᴌHigh DC Current Gain
: h_FE=800ᴕ3200. (V_CE=5.0V, I_C=300mA).
ᴌWide Area of Safe Operation.
ᴌLow Collector Saturation Voltage
: V_CE(sat)=0.17V (I_C=500mA, I_B=5.0mA).
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
V_CBO
60
Collector-Emitter Voltage
V_CEO
50
Emitter-Base Voltage
V_EBO
8
Collector Current
I_C
1.0
Collector Power Dissipation
P_C
500
P_C *
1
Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-55ᴕ150
P_C* : KTD1003 Mounted on Ceramic Substrate (250mm²x0.8t)
UNIT
V
V
V
A
mW
W
á´±
á´±
KTD1003
EPITAXIAL PLANAR NPN TRANSISTOR
A
C
H
G
D
D
K
FF
1 23
DIM
A
B
C
D
E
F
G
H
J
K
MILLIMETERS
4.70 MAX
2.50 +_0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
1.50+_ 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
SOT-89
Marking
h_FE Rank
Lot No.
Type Name
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Output Capacitance
Transition Frequency
I_CBO
I_EBO
h_FE(1) Note
h_FE(2)
V_CE(sat)
V_BE(sat)
C_ob
f_T
V_CB=60V, I_E=0
V_EB=8V, I_C=0
V_CE=5.0V, I_C=300mA
V_CE=5.0V, I_C=1.0A
I_C=500mA, I_B=5.0mA
I_C=500mA, I_B=5.0mA
V_CB=10V, I_E=0, f=1.0MHz
V_CE=10V, I_C=500mA, f=100MHz
Base-Emitter Voltage
V_BE
V_CE=5V, I_C=100mA
Note : h_FE Classification A:800ᴕ1600, B:1200ᴕ2400, C:2000ᴕ3200
2001. 3. 22
Revision No : 4
MIN.
-
-
800
400
-
-
-
150
-
TYP.
-
-
1500
-
0.17
0.80
18
250
630
MAX.
100
100
3200
-
0.30
1.2
30
-
700
UNIT
nA
nA
V
V
pF
MHz
mV
1/2