KTC945B Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
ᴌExcellent h_FE Linearity.
: h_FE(I_C=0.1mA)/h_FE(I_C=2mA)=0.95(Typ.)
ᴌLow Noise : NF=1dB(Typ.). at f=1kHz
ᴌComplementary to KTA733B(O, Y, GR class).
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
RATING
60
50
5
150
625
150
-55ᴕ150
UNIT
V
V
V
mA
mW
á´±
á´±
KTC945B
EPITAXIAL PLANAR NPN TRANSISTOR
B
C
K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. EMITTER
2. BASE
3. COLLECTOR
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE (Note)
V_CE(sat)
V_BE(sat)
f_T
C_ob
I_C=100ỌA, I_E=0
I_C=1mA, I_B=0
I_E=100ỌA, I_C=0
V_CB=60V, I_E=0
V_EB=5V, I_C=0
V_CE=6V, I_C=2mA
I_C=100mA, I_B=10mA
I_C=100mA, I_B=10mA
V_CE=10V, I_C=10mA
V_CB=10V, I_E=0, f=1MHz
Noise Figure
Note : h_FE Classification
NF
V_CE=6V, I_C=0.1mA Rg=10ká½µ, f=1kHz
O:70~140, Y:120~240, GR:200~400, BL:350~700
MIN.
60
50
5
-
-
70
-
-
-
-
-
TYP.
-
-
-
-
-
-
0.1
-
300
2.0
1.0
MAX.
-
-
-
0.1
0.1
700
0.25
1.0
-
3.5
10
UNIT
V
V
V
ỌA
ỌA
V
V
MHz
pF
dB
2001. 9. 14
Revision No : 2
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