KTC9018_15 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
KTC9018
EPITAXIAL PLANAR NPN TRANSISTOR
HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.
VHF BAND AMPLIFIER APPLICATION.
FEATURES
hSmall Reverse Transfer Capacitance
: C_re=0.65pF(Typ.).
hLow Noise Figure : NF=2.2dB(Typ.) at f=100MHz.
hHigh Transition Frequency : f_T=800MHz(Typ.).
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
V_CBO
V_CEO
V_EBO
I_C
I_E
Collector Power Dissipation
*P_C
Junction Temperature
T_j
Storage Temperature Range
T_stg
*Cu Lead-Frame : 625mW
Fe Lead-Frame : 400mW
RATING
40
30
4
20
-20
625
400
150
-55q150
UNIT
V
V
V
mA
mA
mW


B
C
K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. EMITTER
2. BASE
3. COLLECTOR
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Reverse Transfer Capacitance
Transition Frequency
Collector-Base Time Constant
I_CBO
I_EBO
h_FE (Note)
C_re
f_T
C_Chrbb’
V_CB=40V, I_E=0
V_EB=4V, I_C=0
V_CE=5V, I_C=1mA
V_CE=6V, f=1MHz, I_E=0
V_CE=10V, I_C=8mA, f=100MHz
V_CE=6V, I_E=-1mA, f=30MHz
Noise Figure
Power Gain
NF
V_CE=6V, I_E=-1mA, f=100MHz
G_pe
Note : h_FE Classification E:40q59, F:54q80, G:72q108, H:97q146, I:130q198
MIN.
-
-
40
-
500
-
-
15
TYP.
-
-
-
-
800
-
-
-
MAX.
0.1
0.1
198
1.0
-
30
4.0
-
UNIT
ǺA
ǺA
pF
MHz
pS
dB
2013. 7. 08
Revision No : 4
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