KTC9018S_15 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.
VHF BAND AMPLIFIER APPLICATION.
FEATURES
hSmall Reverse Transfer Capacitance
: C_re=0.65pF(Typ.).
hLow Noise Figure : NF=2.2dB(Typ.) at f=100MHz.
hHigh Transition Frequency : f_T=800MHz(Typ.).
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
V_CBO
40
Collector-Emitter Voltage
V_CEO
30
Emitter-Base Voltage
V_EBO
4
Collector Current
I_C
20
Emitter Current
I_E
-20
Collector Power Dissipation
P_C *
350
Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-55q150
* P_C : Package Mounted On 99.5% Alumina (10ƒ8ƒ0.6ɘ)
UNIT
V
V
V
mA
mA
mW


KTC9018S
EPITAXIAL PLANAR NPN TRANSISTOR
E
L BL
DIM MILLIMETERS
A
2.93+_ 0.20
B 1.30+0.20/-0.15
2
3
C
1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1
G
1.90
H
0.95
J 0.13+0.10/-0.05
K
0.00 ~ 0.10
Q
P
P
L
0.55
M
0.20 MIN
N 1.00+0.20/-0.10
P
7
Q
0.1 MAX
M
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
Marking
h_FE Rank
BG ^{Type Name}
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Reverse Transfer Capacitance
Transition Frequency
Collector-Base Time Constant
I_CBO
I_EBO
h_FE (Note)
C_re
f_T
C_Chrbb’
V_CB=40V, I_E=0
V_EB=4V, I_C=0
V_CE=5V, I_C=1mA
V_CE=6V, f=1MHz, I_E=0
V_CE=10V, I_C=8mA, f=100MHz
V_CE=6V, I_E=-1mA, f=30MHz
Noise Figure
Power Gain
NF
V_CE=6V, I_E=-1mA, f=100MHz
G_pe
Note : h_FE Classification F:54q80, G:72q108, H:97q146, I:130q198
MIN.
-
-
54
-
500
-
-
15
TYP.
-
-
-
-
800
-
-
-
MAX.
0.1
0.1
198
1.0
-
30
4.0
-
UNIT
ǺA
ǺA
pF
MHz
pS
dB
2003. 3. 25
Revision No : 1
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