KTC9018S Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.
VHF BAND AMPLIFIER APPLICATION.
FEATURES
Small Reverse Transfer Capacitance
: C_re=0.65pF(Typ.).
Low Noise Figure : NF=2.2dB(Typ.) at f=100MHz.
High Transition Frequency : f_T=800MHz(Typ.).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
V_CBO
40
V_CEO
30
V_EBO
4
I_C
20
I_E
-20
P_C *
350
T_j
150
Storage Temperature Range
T_stg
-55 150
* P_C : Package Mounted On 99.5% Alumina (10 8 0.6 )
UNIT
V
V
V
mA
mA
mW
KTC9018S
EPITAXIAL PLANAR NPN TRANSISTOR
E
L BL
2
3
1
P
P
M
1. EMITTER
2. BASE
3. COLLECTOR
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
SOT-23
Marking
h_FE Rank
BG ^{Type Name}
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
I_CBO
V_CB=40V, I_E=0
Emitter Cut-off Current
I_EBO
V_EB=4V, I_C=0
DC Current Gain
h_FE (Note) V_CE=5V, I_C=1mA
Reverse Transfer Capacitance
C_re
V_CE=6V, f=1MHz, I_E=0
Transition Frequency
f_T
V_CE=10V, I_C=8mA, f=100MHz
Collector-Base Time Constant
C_C rbb' V_CE=6V, I_E=-1mA, f=30MHz
Noise Figure
Power Gain
NF
G_pe
V_CE=6V, I_E=-1mA, f=100MHz
Note : h_FE Classification F:54 80, G:72 108, H:97 146, I:130 198
MIN.
-
-
54
-
500
-
-
15
TYP.
-
-
-
-
800
-
-
-
MAX.
0.1
0.1
198
1.0
-
30
4.0
-
UNIT
A
A
pF
MHz
pS
dB
2003. 3. 25
Revision No : 1
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