KTC9015S_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
hExcellent h_FE Linearity
: h_FE(I_C=-0.1mA)/h_FE(I_C=-2mA)=0.95(Typ.).
hLow Noise :NF=1dB(Typ.) at f=1kHz.
hComplementary to KTC9014S.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
V_CBO
-50
Collector-Emitter Voltage
V_CEO
-50
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
V_EBO
I_C
I_E
P_C *
T_j
T_stg
-5
-150
150
350
150
-55q150
* P_C : Package Mounted On 99.5% Alumina (10ƒ8ƒ0.6ɘ)
UNIT
V
V
V
mA
mA
mW


KTC9015S
EPITAXIAL PLANAR PNP TRANSISTOR
E
L BL
DIM MILLIMETERS
A
2.93+_ 0.20
B 1.30+0.20/-0.15
2
3
C
1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1
G
1.90
H
0.95
J 0.13+0.10/-0.05
K
0.00 ~ 0.10
Q
P
P
L
0.55
M
0.20 MIN
N 1.00+0.20/-0.10
P
7
Q
0.1 MAX
M
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
Marking
h_FE Rank
BE ^{Type Name}
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
I_CBO
Emitter Cut-off Current
I_EBO
DC Current Gain
h_FE (Note)
Collector-Emitter Saturation Voltage
V_CE(sat)
Transition Frequency
f_T
Collector Output Capacitance
C_ob
Noise Figure
NF
Note : h_FE Classification B:100q300, C:200q600
V_CB=-50V, I_E=0
V_EB=-5V, I_C=0
V_CE=-5V, I_C=-1mA
I_C=-100mA, I_B=-10mA
V_CE=-10V, I_C=-1mA, f=100MHz
V_CB=-10V, I_E=0, f=1MHz
V_CE=-6V, I_C=-0.1mA, Rg=10kʃ, f=1kHz
MIN.
-
-
100
-
60
-
-
TYP.
-
-
-
-0.1
-
4.0
1.0
MAX.
-50
-100
600
-0.3
-
7.0
10
UNIT
nA
nA
V
MHz
pF
dB
2003. 3. 25
Revision No : 1
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