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| KTC9015SC Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR | |||
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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
hExcellent hFE Linearity
: hFE(IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.).
hComplementary to KTC9014SC.
KTC9015SC
EPITAXIAL PLANAR PNP TRANSISTOR
MAXIMUM RATING (Ta=25Â)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
VCBO
-70
Collector-Emitter Voltage
VCEO
-50
Emitter-Base Voltage
VEBO
-5
Collector Current
IC
-100
Collector Power Dissipation
PC *
350
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55q150
* PC : Package Mounted On 99.5% Alumina (10Â8Â0.6É)
UNIT
V
V
V
mA
mW
Â
Â
ELECTRICAL CHARACTERISTICS (Ta=25Â)
CHARACTERISTIC
SYMBOL
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
Transition Frequency
fT
TEST CONDITION
IC=-0.05mA, IE=0
IC=-1mA, IB=0
IE=-0.05mA, IC=0
VCB=-50V, IE=0
VEB=-5V, IC=0
VCE=-5V, IC=1mA
IC=-100mA, IB=-5mA
IC=-100mA, IB=-5mA
VCE=-5V, IC=-10mA, f=30MHz
MIN.
-70
-50
-8
-
-
200
-
-
150
TYP.
-
-
-
-
-
-
-
-
-
MAX.
-
-
-
-0.1
-0.1
300
-0.3
-1
-
UNIT
V
V
V
uA
uA
V
V
MHz
2015. 5. 12
Revision No : 0
1/2
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