KTC9014S_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
hExcellent h_FE Linearity
: h_FE(I_C=0.1mA)/h_FE(I_C=2mA)=0.95(Typ.).
hLow Noise :NF=1dB(Typ.) at f=1kHz.
hComplementary to KTC9015S.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
V_CBO
60
Collector-Emitter Voltage
V_CEO
50
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
V_EBO
I_C
I_E
P_C *
T_j
T_stg
5
150
-150
350
150
-55q150
* P_C : Package Mounted On 99.5% Alumina (10ƒ8ƒ0.6ɘ)
UNIT
V
V
V
mA
mA
mW


KTC9014S
EPITAXIAL PLANAR NPN TRANSISTOR
E
L BL
DIM MILLIMETERS
A
2.93+_ 0.20
B 1.30+0.20/-0.15
2
3
C
1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1
G
1.90
H
0.95
J 0.13+0.10/-0.05
K
0.00 ~ 0.10
Q
P
P
L
0.55
M
0.20 MIN
N 1.00+0.20/-0.10
P
7
Q
0.1 MAX
M
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
Marking
h_FE Rank
BD ^{Type Name}
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
I_CBO
V_CB=50V, I_E=0
Emitter Cut-off Current
I_EBO
V_EB=5V, I_C=0
DC Current Gain
h_FE (Note) V_CE=5V, I_C=1mA
Collector-Emitter Saturation Voltage
V_CE(sat)
I_C=100mA, I_B=10mA
Transition Frequency
f_T
V_CE=10V, I_C=1mA, f=100MHz
Collector Output Capacitance
C_ob
V_CB=10V, I_E=0, f=1MHz
Noise Figure
NF
V_CE=6V, I_C=0.1mA, Rg=10kʃ, f=1kHz
Note : h_FE Classification B:100q300, C:200q600, D:400q1000
MIN.
-
-
100
-
60
-
-
TYP.
-
-
-
0.1
-
2.0
1.0
MAX.
50
100
1000
0.25
-
3.5
10
UNIT
nA
nA
V
MHz
pF
dB
2003. 3. 25
Revision No : 1
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