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KTC9014SC Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
hExcellent hFE Linearity
: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).
hComplementary to KTC9015SC.
KTC9014SC
EPITAXIAL PLANAR NPN TRANSISTOR
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
VCBO
80
Collector-Emitter Voltage
VCEO
50
Emitter-Base Voltage
VEBO
8
Collector Current
IC
100
Collector Power Dissipation
PC *
350
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55q150
* PC : Package Mounted On 99.5% Alumina (10ƒ8ƒ0.6ɘ)
UNIT
V
V
V
mA
mW


ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
TEST CONDITION
IC=0.05mA, IE=0
IC=1mA, IB=0
IE=0.05mA, IC=0
VCB=55V, IE=0
VEB=5V, IC=0
VCE=5V, IC=1mA
IC=100mA, IB=5mA
IC=100mA, IB=5mA
VCE=5V, IC=10mA, f=30MHz
MIN.
80
50
8
-
-
200
-
-
150
TYP.
-
-
-
-
-
-
-
-
-
MAX.
-
-
-
0.1
0.1
300
0.3
1
-
UNIT
V
V
V
uA
uA
V
V
MHz
2015. 5. 12
Revision No : 0
1/2
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