KTC9014S Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Excellent h_FE Linearity
: h_FE(I_C=0.1mA)/h_FE(I_C=2mA)=0.95(Typ.).
Low Noise :NF=1dB(Typ.) at f=1kHz.
Complementary to KTC9015S.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
I_E
P_C *
T_j
60
50
5
150
-150
350
150
Storage Temperature Range
T_stg
-55 150
* P_C : Package Mounted On 99.5% Alumina (10 8 0.6 )
UNIT
V
V
V
mA
mA
mW
KTC9014S
EPITAXIAL PLANAR NPN TRANSISTOR
E
L BL
2
3
1
P
P
M
1. EMITTER
2. BASE
3. COLLECTOR
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
SOT-23
Marking
h_FE Rank
BD ^{Type Name}
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
I_CBO
I_EBO
h_FE (Note)
V_CE(sat)
f_T
C_ob
V_CB=50V, I_E=0
V_EB=5V, I_C=0
V_CE=5V, I_C=1mA
I_C=100mA, I_B=10mA
V_CE=10V, I_C=1mA, f=100MHz
V_CB=10V, I_E=0, f=1MHz
Noise Figure
NF
V_CE=6V, I_C=0.1mA, Rg=10k , f=1kHz
Note : h_FE Classification B:100 300, C:200 600, D:400 1000
MIN.
-
-
100
-
60
-
-
TYP.
-
-
-
0.1
-
2.0
1.0
MAX.
50
100
1000
0.25
-
3.5
10
UNIT
nA
nA
V
MHz
pF
dB
2002. 9. 3
Revision No : 0
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