KTC9014A Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Excellent h_FE Linearity
: h_FE(I_C=0.1mA)/h_FE(I_C=2mA)=0.95(Typ.).
Low Noise :NF=1dB(Typ.) at f=1kHz.
Complementary to KTC9015A.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
I_E
P_C
T_j
Storage Temperature Range
T_stg
RATING
60
50
5
150
-150
400
150
-55 150
UNIT
V
V
V
mA
mA
mW
KTC9014A
EPITAXIAL PLANAR NPN TRANSISTOR
B
C
K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. EMITTER
2. BASE
3. COLLECTOR
TO-92 (F)
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
I_CBO
I_EBO
h_FE (Note)
V_CE(sat)
f_T
C_ob
V_CB=50V, I_E=0
V_EB=5V, I_C=0
V_CE=5V, I_C=1mA
I_C=100mA, I_B=10mA
V_CE=10V, I_C=1mA, f=100MHz
V_CB=10V, I_E=0, f=1MHz
Noise Figure
NF
V_CE=6V, I_C=0.1mA, Rg=10k , f=1kHz
Note : h_FE Classification A:60 150, B:100 300, C:200 600, D:400 1000
MIN.
-
-
60
-
60
-
-
TYP.
-
-
-
0.1
-
2.0
1.0
MAX.
50
100
1000
0.25
-
3.5
10
UNIT
nA
nA
V
MHz
pF
dB
2010. 1. 28
Revision No : 2
1/1