KTC9013_10 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
hExcellent h_FE Linearity.
hComplementary to KTC9012.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
V_CBO
V_CEO
V_EBO
I_C
I_E
Collector Power Dissipation
P_C*
Junction Temperature
T_j
Storage Temperature Range
T_stg
* Cu Lead-Frame : 625mW
Fe Lead-Frame : 400mW
RATING
40
30
5
500
-500
625
400
150
-55q150
UNIT
V
V
V
mA
mA
mW


KTC9013
EPITAXIAL PLANAR NPN TRANSISTOR
B
C
K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. EMITTER
2. BASE
3. COLLECTOR
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
Collector Cut-off Current
I_CBO
V_CB=35V, I_E=0
-
Emitter Cut-off Current
I_EBO
V_EB=5V, I_C=0
-
DC Current Gain
h_FE (Note) V_CE=1V, I_C=50mA
64
Collector-Emitter Saturation Voltage
V_CE(sat)
I_C=100mA, I_B=10mA
-
Base-Emitter Voltage
V_BE
I_C=100mA, V_CE=1V
Transition Frequency
f_T
V_CB=6V, I_C=20mA, f=100MHz
140
Collector Output Capacitance
C_ob
V_CB=6V, I_E=0, f=1MHz
-
Note : h_FE Classification D:64q91, E:78q112, F:96q135, G:118q166, H:144q202, I:176q246
TYP.
-
-
-
0.1
0.8
-
7.0
MAX.
0.1
0.1
246
0.25
1.0
-
-
UNIT
ǺA
ǺA
V
V
MHz
pF
2010. 6. 25
Revision No : 2
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