KTC9013SC Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
hExcellent h_FE Linearity.
hComplementary to KTC9012SC.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
V_CBO
40
V_CEO
30
Emitter-Base Voltage
V_EBO
5
Collector Current
I_C
500
Collector Power Dissipation
P_C *
350
Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-55q150
* P_C : Package Mounted On 99.5% Alumina (10ƒ8ƒ0.6ɘ)
UNIT
V
V
V
mA
mW


KTC9013SC
EPITAXIAL PLANAR NPN TRANSISTOR
E
L BL
2
3
1
M
DIM MILLIMETERS
A
2.90+_ 0.1
B 1.30+0.20/-0.15
C
1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
G
1.90
J
0.10
K
0.00 ~ 0.10
L
0.55
M
0.20 MIN
N 1.00+0.20/-0.10
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23(1)
Marking
CBC ^{Type Name}
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE(sat)
f_T
TEST CONDITION
I_C=0.05mA, I_E=0
I_C=1mA, I_B=0
I_E=0.05mA, I_C=0
V_CB=40V, I_E=0
V_EB=5V, I_C=0
V_CE=1V, I_C=50mA
I_C=500mA, I_B=50mA
I_C=500mA, I_B=50mA
V_CE=6V, I_C=20mA, f=30MHz
MIN.
70
30
6
-
-
200
-
-
150
TYP.
-
-
-
-
-
-
-
-
-
MAX.
-
-
-
0.1
0.1
300
0.6
1.2
-
UNIT
V
V
V
uA
uA
V
V
MHz
2015. 5. 12
Revision No : 0
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