KTC9013S Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Excellent h_FE Linearity.
Complementary to KTC9012S.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
V_CBO
V_CEO
V_EBO
I_C
I_E
P_C *
40
30
5
500
-500
350
Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-55 150
* P_C : Package Mounted On 99.5% Alumina (10 8 0.6 )
UNIT
V
V
V
mA
mA
mW
KTC9013S
EPITAXIAL PLANAR NPN TRANSISTOR
E
L BL
2
3
1
P
P
M
1. EMITTER
2. BASE
3. COLLECTOR
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
SOT-23
Marking
h_FE Rank
BC ^{Type Name}
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
I_CBO
I_EBO
h_FE (Note)
V_CE(sat)
V_BE
f_T
V_CB=35V, I_E=0
V_EB=5V, I_C=0
V_CE=1V, I_C=50mA
I_C=100mA, I_B=10mA
I_C=100mA, V_CE=1V
V_CE=6V, I_C=20mA, f=100MHz
Collector Output Capacitance
C_ob
V_CB=6V, I_E=0, f=1MHz
Note : h_FE Classification F:96 135, G:118 166, H:144 202, I:176 246
MIN.
-
-
96
-
140
-
TYP.
-
-
-
0.1
0.8
-
7.0
MAX.
0.1
0.1
246
0.25
1.0
-
-
UNIT
A
A
V
V
MHz
pF
2002. 9. 3
Revision No : 0
1/1