KTC9012S_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
hExcellent h_FE Linearity.
hComplementary to KTC9013S.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
V_CBO
-40
V_CEO
-30
Emitter-Base Voltage
V_EBO
-5
Collector Current
I_C
-500
Emitter Current
I_E
500
Collector Power Dissipation
P_C *
350
Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-55q150
* P_C : Package Mounted On 99.5% Alumina (10ƒ8ƒ0.6ɘ)
UNIT
V
V
V
mA
mA
mW


KTC9012S
EPITAXIAL PLANAR PNP TRANSISTOR
E
L BL
DIM MILLIMETERS
A
2.93+_ 0.20
B 1.30+0.20/-0.15
2
3
C
1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1
G
1.90
H
0.95
J 0.13+0.10/-0.05
K
0.00 ~ 0.10
Q
P
P
L
0.55
M
0.20 MIN
N 1.00+0.20/-0.10
P
7
Q
0.1 MAX
M
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
Marking
h_FE Rank
BB ^{Type Name}
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
I_CBO
I_EBO
h_FE (Note)
V_CE(sat)
V_BE
f_T
V_CB=-35V, I_E=0
V_EB=-5V, I_C=0
V_CE=-1V, I_C=-50mA
I_C=-100mA, I_B=-10mA
I_C=-100mA, V_CE=-1V
V_CE=-6V, I_C=-20mA, f=100MHz
Collector Output Capacitance
C_ob
V_CB=-6V, I_E=0, f=1MHz
Note : h_FE Classification F:96q135, G:118q166, H:144q202, I:176q246
MIN.
-
-
96
-
150
-
TYP.
-
-
-
-0.1
-0.8
-
7.0
MAX.
-0.1
-0.1
246
-0.25
-1.0
-
-
UNIT
ǺA
ǺA
V
V
MHz
pF
2003. 3. 25
Revision No : 1
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