KTC8550S Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURE
hComplementary to KTC8050S.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
I_E
P_C *
T_j
-35
-30
-5
-800
800
350
150
Storage Temperature Range
T_stg
-55q150
* P_C : Package Mounted On 99.5% Alumina (10ƒ8ƒ0.6ɘ)
UNIT
V
V
V
mA
mA
mW


KTC8550S
EPITAXIAL PLANAR PNP TRANSISTOR
E
L BL
DIM MILLIMETERS
A
2.93+_ 0.20
B 1.30+0.20/-0.15
2
3
C
1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1
G
1.90
H
0.95
J 0.13+0.10/-0.05
K
0.00 ~ 0.10
Q
P
P
L
0.55
M
0.20 MIN
N 1.00+0.20/-0.10
P
7
Q
0.1 MAX
M
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
Marking
h_FE Rank
BL ^{Type Name}
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
I_CBO
V_(BR)CBO
V_(BR)CEO
h_FE(1) (Note)
h_FE(2)
V_CE(sat)
V_BE
f_T
Collector Output Capacitance
C_ob
Note : h_FE(1) Classification C : 100q200, D : 150q300
TEST CONDITION
V_CB=-15V, I_E=0
I_C=-0.5mA, I_E=0
I_C=-1mA, I_B=0
V_CE=-1V, I_C=-50mA
V_CE=-1V, I_C=-350mA
I_C=-500mA, I_B=-50mA
V_CE=-1V, I_C=-500mA
V_CE=-5V, I_C=-10mA
V_CB=-10V, f=1MHz, I_E=0
MIN.
-
-35
-30
100
60
-
-
-
-
TYP.
-
-
-
-
-
-
-
120
19
MAX.
-50
-
-
300
-
-0.5
-1.2
-
-
UNIT
nA
V
V
V
V
MHz
pF
2003. 3. 25
Revision No : 1
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