KTC8550A Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURE
Complementary to KTC8050A.
KTC8550A
EPITAXIAL PLANAR PNP TRANSISTOR
B
C
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
V_CBO
V_CEO
V_EBO
I_C
I_E
P_C
T_j
T_stg
RATING
-35
-30
-5
-800
800
400
150
-55 150
UNIT
V
V
V
mA
mA
mW
K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. EMITTER
2. BASE
3. COLLECTOR
TO-92 (F)
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
I_CBO
V_(BR)CBO
V_(BR)CEO
h_FE(1) (Note)
h_FE(2)
V_CE(sat)
V_BE
f_T
Collector Output Capacitance
C_ob
Note : h_FE(1) Classification C : 100 200, D : 150 300
TEST CONDITION
V_CB=-15V, I_E=0
I_C=-0.5mA, I_E=0
I_C=-1mA, I_B=0
V_CE=-1V, I_C=-50mA
V_CE=-1V, I_C=-350mA
I_C=-500mA, I_B=-50mA
V_CE=-1V, I_C=-500mA
V_CE=-5V, I_C=-10mA
V_CB=-10V, f=1MHz, I_E=0
MIN.
-
-35
-30
100
60
-
-
-
-
TYP.
-
-
-
-
-
-
-
120
19
MAX.
-50
-
-
300
-
-0.5
-1.2
-
-
UNIT
nA
V
V
V
V
MHz
pF
2010. 1. 28
Revision No : 2
1/2