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KTC815_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR
SEMICONDUCTOR
TECHNICAL DATA
LOW FREQUENCY AMPLIFIER
FEATURES
Collector-Base Voltage : VCBO=60V.
Complementary to KTA539.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
RATING
60
45
5
200
625
150
-55 150
UNIT
V
V
V
mA
mW
KTC815
EPITAXIAL PLANAR NPN TRANSISTOR
B
C
K
E
G
D
H
F
F
1 23
DIM MILLIMETERS
N
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00+_ 0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. EMITTER
2. BASE
3. COLLECTOR
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Base-Emitter Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE (Note)
VBE
VCE(sat)
VBE(sat)
fT
Collector Output Capacitance
Cob
Note : hFE Classification O:70~140, Y:120~240
TEST CONDITION
IC=100 A, IE=0
IC=10mA, IB=0
IE=10 A, IC=0
VCB=45V, IE=0
VEB=3V, IC=0
VCE=1V, IC=50mA
VCE=1V, IC=10mA
IC=150mA, IB=15mA
IC=150mA, IB=15mA
VCE=10V, IC=10mA
VCB=10V, IE=0, f=1MHz
MIN.
60
45
5
-
-
70
0.6
-
-
100
-
TYP.
-
-
-
-
-
-
0.65
0.15
0.83
200
4
MAX.
-
-
-
0.1
0.1
240
0.9
0.4
1.1
-
-
UNIT
V
V
V
A
A
V
V
V
MHz
pF
2003. 3. 5
Revision No : 0
1/2
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