KTC814U_15 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
FOR MUTING AND SWITCHING APPLICATION.
FEATURES
High Emitter-Base Voltage : V_EBO=25V(Min.)
High Reverse h_FE
: Reverse h_FE=150(Typ.) (V_CE=-2V, I_C=-4mA)
Low on Resistance : R_ON=1 (Typ.), (I_B=5mA)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Rating
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C *
T_j
T_stg
EQUIVALENT CIRCUIT (TOP VIEW)
6
5
4
RATING
50
20
25
300
60
200
150
-55 150
UNIT
V
V
V
mA
mA
mW
Q1
Q2
KTC814U
EPITAXIAL PLANAR NPN TRANSISTOR
B
B1
1
6
DIM MILLIMETERS
A
2.00+_ 0.20
2
5
A1
1.3+_ 0.1
B
2.1+_ 0.1
3
4 D _B1
1.25+_ 0.1
C
0.65
D
0.2+0.10/-0.05
G
0-0.1
H
0.9+_ 0.1
T
T
0.15+0.1/-0.05
G
1. Q1 EMITTER
2. Q₁ BASE
3. Q₂ COLLECTOR
4. Q₂ EMITTER
5. Q₂ BASE
6. Q₁ COLLECTOR
US6
Marking ₆
5
4
HB ^{Type Name}
Lot No.
1
2
3
1
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
Collector Cut-off Current
I_CBO
V_CB=50V, I_E=0
-
Emitter Cut-off Current
I_EBO
V_EB=25V, I_C=0
-
DC Current Gain
h_FE
V_CE=2V, I_C=4mA
350
Collector-Emitter Saturation Voltage V_CE(sat) I_C=30mA, I_B=3mA
-
Base-Emitter Voltage
V_BE
V_CE=2V, I_C=4mA
-
Transition Frequency
f_T
V_CE=6V, I_C=4mA
-
Collector Output Capacitance
C_ob
V_CB=10V, I_E=0, f=1MHz
-
Switching
Time
Turn-on Time
t_on
Storage Time
t_stg
Fall Time
t_f
Note : h_FE Classification B: 350 1200
INPUT
4kΩ
10V
OUTPUT
-
-
1µs
DUTY CYCLE ^<= 2%
V_CC =12V
-
V_BB =-3V
2
3
TYP.
-
-
-
0.042
0.61
30
4.8
MAX.
0.1
0.1
1200
0.3
-
-
7
UNIT
A
A
V
V
MHz
pF
160
-
500
-
nS
130
-
2008. 9. 23
Revision No : 1
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