KTC812T_15 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
FOR MUTING AND SWITCHING APPLICATION.
FEATURES
High Emitter-Base Voltage : V_EBO=25V(Min.)
High Reverse h_FE
: Reverse h_FE=150(Typ.) (V_CE=-2V, I_C=-4mA)
Low on Resistance : R_ON=1 (Typ.), (I_B=5mA)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
V_CBO
50
Collector-Emitter Voltage
V_CEO
20
Emitter-Base Voltage
V_EBO
25
Collector Current
I_C
300
Base Current
I_B
60
Collector Power Dissipation
P_C *
0.9
Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-55 150
* Package mounted on a ceramic board (600 0.8 )
EQUIVALENT CIRCUIT (TOP VIEW)
6
5
4
UNIT
V
V
V
mA
mA
W
Q1
Q2
KTC812T
EPITAXIAL PLANAR NPN TRANSISTOR
E
K
B
K
1
6
2
5
3
4
H
J
J
1. Q₁ EMITTER
2. Q₁ BASE
3. Q₂ COLLECTOR
4. Q₂ EMITTER
5. Q₂ BASE
6. Q₁ COLLECTOR
DIM
A
B
C
D
E
F
G
H
I
J
K
L
MILLIMETERS
2.9+_ 0.2
1.6+0.2/-0.1
0.70+_ 0.05
0.4+_ 0.1
2.8+0.2/-0.3
1.9+_ 0.2
0.95
0.16+_ 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
TS6
Marking
654
h_FE Rank
M ^{Type Name}
Lot No.
1
2
3
123
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
Collector Cut-off Current
I_CBO
V_CB=50V, I_E=0
-
Emitter Cut-off Current
I_EBO
V_EB=25V, I_C=0
-
DC Current Gain
h_FE
V_CE=2V, I_C=4mA
350
Collector-Emitter Saturation Voltage V_CE(sat) I_C=30mA, I_B=3mA
-
Base-Emitter Voltage
V_BE
V_CE=2V, I_C=4mA
-
Transition Frequency
f_T
V_CE=6V, I_C=4mA
-
Collector Output Capacitance
C_ob
V_CB=10V, I_E=0, f=1MHz
-
Switching
Time
Turn-on Time
t_on
Storage Time
t_stg
Fall Time
t_f
Note : h_FE Classification B: 350 1200
INPUT
4kΩ
10V
OUTPUT
-
-
1µs
DUTY CYCLE ^<= 2%
V_CC =12V
-
V_BB =-3V
TYP.
-
-
-
0.042
0.61
30
4.8
MAX.
0.1
0.1
1200
0.3
-
-
7
UNIT
A
A
V
V
MHz
pF
160
-
500
-
nS
130
-
2002. 12. 5
Revision No : 1
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