KTC812E_15 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
A super-minimold package houses 2 transistor.
Excellent temperature response between these 2 transistor.
High pairing property in h_FE.
The follwing characteristics are common for Q₁, Q₂.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C *
T_j
Storage Temperature Range
T_stg
* Total Rating
RATING
60
50
5
150
30
200
150
-55 150
UNIT
V
V
V
mA
mA
mW
KTC812E
EPITAXIAL PLANAR NPN TRANSISTOR
B
B1
1
6
DIM MILLIMETERS
A
1.6+_ 0.05
A1
1.0 +_ 0.05
2
5
B
1.6+_ 0.05
B1
1.2 +_ 0.05
3
4
C
0.50
D
0.2+_ 0.05
H
0.5+_ 0.05
J
0.12+_ 0.05
P
P
P
5
1. Q1 EMITTER
2. Q₁ BASE
3. Q₂ BASE
4. Q₂ COLLECTOR
5. Q₂ EMITTER
6. Q₁ COLLECTOR
TES6
EQUIVALENT CIRCUIT (TOP VIEW)
6
5
4
Q1
Q2
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
I_CBO
I_EBO
h_FE (Note)
V_CE(sat)
f_T
C_ob
V_CB=60V, I_E=0
V_EB=5V, I_C=0
V_CE=6V, I_C=2
I_C=100 , I_B=10
V_CE=10V, I_C=1
V_CB=10V, I_E=0, f=1
Noise Figure
NF
V_CE=6V, I_C=0.1 , f=1 , Rg=10
Note : h_FE Classification Y(4):120 240, GR(6):200 400
Marking
1
2
3
MIN.
-
-
120
-
80
-
-
TYP.
-
-
-
0.1
-
2
1.0
MAX.
0.1
0.1
400
0.3
-
3.5
10
UNIT.
V
6
5
4
Lot No.
W4 ^{Type Name}
2008. 9. 23
Revision No : 1
1
2
3
1/3