KTC811T Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Excellent h_FE Linearity
: h_FE(2)=25(Min.) at V_CE=6V, I_C=400mA.
Complementary to KTA711T.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
I_E
P_C *
T_j
35
30
5
500
-500
0.9
150
Storage Temperature Range
T_stg
-55 150
* Package mounted on a ceramic board (600 0.8 )
UNIT
V
V
V
mA
mA
W
KTC811T
EPITAXIAL PLANAR NPN TRANSISTOR
E
K
B
K
1
6
2
5
3
4
H
J
J
1. Q₁ EMITTER
2. Q₁ BASE
3. Q₂ COLLECTOR
4. Q₂ EMITTER
5. Q₂ BASE
6. Q₁ COLLECTOR
DIM
A
B
C
D
E
F
G
H
I
J
K
L
MILLIMETERS
2.9+_ 0.2
1.6+0.2/-0.1
0.70+_ 0.05
0.4+_ 0.1
2.8+0.2/-0.3
1.9+_ 0.2
0.95
0.16+_ 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
TS6
EQUIVALENT CIRCUIT (TOP VIEW)
6
5
4
Q1
Q2
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
I_CBO
I_EBO
h_FE(1) (Note)
h_FE(2) (Note)
V_CE(sat)
V_BE
f_T
Collector Output Capacitance
C_ob
Note : h_FE(1) Classification 0:70 140, Y:120 240
h_FE(2) Classification 0:25Min., Y:40Min.
TEST CONDITION
V_CB=35V, I_E=0
V_EB=5V, I_C=0
V_CE=1V, I_C=100mA
V_CE=6V, I_C=400mA
I_C=100mA, I_B=10mA
V_CE=1V, I_C=100mA
V_CE=6V, I_C=20mA
V_CB=6V, I_E=0, f=1MHz
1
MIN.
-
-
70
25
-
-
-
-
Marking
6
h_FE Rank
2
3
TYP.
-
-
-
-
0.1
0.8
300
7.0
MAX.
0.1
0.1
240
-
0.25
1.0
-
-
UNIT
A
A
V
V
MHz
pF
54
Lot No.
L ^{Type Name}
123
2001. 6. 27
Revision No : 0
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