KTC811E Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
ᴌA super-minimold package houses 2 transistor.
ᴌExcellent temperature response between these 2 transistor.
ᴌHigh pairing property in h_FE.
ᴌThe follwing characteristics are common for Q₁, Q₂.
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C *
T_j
Storage Temperature Range
T_stg
* Total Rating
RATING
60
50
5
150
30
200
150
-55ᴕ150
UNIT
V
V
V
mA
mA
mW
á´±
á´±
KTC811E
EPITAXIAL PLANAR NPN TRANSISTOR
B
B1
1
6
DIM MILLIMETERS
A
1.6+_ 0.05
2
5
A1
1.0 +_ 0.05
B
1.6+_ 0.05
B1
1.2 +_ 0.05
3
4
C
0.50
D
0.2+_ 0.05
H
0.5+_ 0.05
P
J
0.12+_ 0.05
P
P
5
1. Q1 EMITTER
2. Q₂ EMITTER
3. Q₂ BASE
4. Q₂ COLLECTOR
5. Q₁ BASE
6. Q₁ COLLECTOR
TES6
EQUIVALENT CIRCUIT (TOP VIEW)
6
5
4
Q1
Q2
1
2
3
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN. TYP. MAX. UNIT.
Collector Cut-off Current
I_CBO
V_CB=60V, I_E=0
-
-
0.1
ὧ
Emitter Cut-off Current
I_EBO
V_EB=5V, I_C=0
-
-
0.1
ὧ
DC Current Gain
h_FE (Note) V_CE=6V, I_C=2Ὠ
120
-
400
Collector-Emitter Saturation Voltage
V_CE(sat)
I_C=100Ὠ, I_B=10Ὠ
-
0.1
0.3
V
Transition Frequency
f_T
V_CE=10V, I_C=1Ὠ
80
-
-
á½²
Collector Output Capacitance
C_ob
V_CB=10V, I_E=0, f=1á½²
-
2
3.5
ὸ
Noise Figure
NF
V_CE=6V, I_C=0.1Ὠ, f=1ά, Rg=10ὶ
-
1.0
10
὘
Note : h_FE Classification Y(4):120ᴕ240, GR(6):200ᴕ400
Marking
Type Name
6
5
4
V
h_FE Rank
2001. 8. 6
Revision No : 0
1
2
3
1/3