KTC8050_9911 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURE
Complementary to KTC8550.
KTC8050
EPITAXIAL PLANAR NPN TRANSISTOR
B
C
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
I_E
P_C
T_j
Storage Temperature Range
T_stg
RATING
35
30
5
800
-800
625
150
-55 150
UNIT
V
V
V
mA
mA
mW
K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. EMITTER
2. BASE
3. COLLECTOR
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
I_CBO
V_(BR)CBO
V_(BR)CEO
h_FE(1) (Note)
h_FE(2)
V_CE(sat)
V_BE
f_T
Collector Output Capacitance
C_ob
Note : h_FE(1) Classification C : 100 200, D : 150 300
TEST CONDITION
V_CB=15V, I_E=0
I_C=0.5mA, I_E=0
I_C=1mA, I_B=0
V_CE=1V, I_C=50mA
V_CE=1V, I_C=350mA
I_C=500mA, I_B=20mA
V_CE=1V, I_C=500mA
V_CE=5V, I_C=10mA
V_CB=10V, f=1MHz, I_E=0
MIN.
-
35
30
100
60
-
-
-
-
TYP.
-
-
-
-
-
-
-
120
13
MAX.
50
-
-
300
-
0.5
1.2
-
-
UNIT
nA
V
V
V
V
MHz
pF
1999. 11. 30
Revision No : 3
1/2