KTC8050S_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURE
hComplementary to KTC8550S.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
I_E
P_C *
T_j
35
30
5
800
-800
350
150
Storage Temperature Range
T_stg
-55q150
* P_C : Package Mounted On 99.5% Alumina (10ƒ8ƒ0.6ɘ)
UNIT
V
V
V
mA
mA
mW


KTC8050S
EPITAXIAL PLANAR NPN TRANSISTOR
E
L BL
DIM MILLIMETERS
A
2.93+_ 0.20
B 1.30+0.20/-0.15
2
3
C
1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1
G
1.90
H
0.95
J 0.13+0.10/-0.05
K
0.00 ~ 0.10
Q
P
P
L
0.55
M
0.20 MIN
N 1.00+0.20/-0.10
P
7
Q
0.1 MAX
M
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
Marking
h_FE Rank
BK ^{Type Name}
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
I_CBO
V_(BR)CBO
V_(BR)CEO
DC Current Gain
h_FE(1) (Note)
h_FE(2)
Collector-Emitter Saturation Voltage
V_CE(sat)
Base-Emitter Voltage
V_BE
Transition Frequency
f_T
Collector Output Capacitance
C_ob
Note : h_FE(1) Classification C : 100q200, D : 150q300
TEST CONDITION
V_CB=15V, I_E=0
I_C=0.5mA, I_E=0
I_C=1mA, I_B=0
V_CE=1V, I_C=50mA
V_CE=1V, I_C=350mA
I_C=500mA, I_B=20mA
V_CE=1V, I_C=500mA
V_CE=5V, I_C=10mA
V_CB=10V, f=1MHz, I_E=0
MIN.
-
35
30
100
60
-
-
-
-
TYP.
-
-
-
-
-
-
-
120
13
MAX.
50
-
-
300
-
0.5
1.2
-
-
UNIT
nA
V
V
V
V
MHz
pF
2003. 3. 25
Revision No : 1
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