KTC802E_15 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
hHigh Current.
hLow V_CE(sat) .
: V_CE(sat)†250mV at I_C=200mA/I_B=10mA.
hComplementary to KTA702E.
KTC802E
EPITAXIAL PLANAR NPN TRANSISTOR
MAXIMUM RATINGS (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Note : Single pulse Pw=1mS.
* Total Rating.
V_CBO
V_CEO
V_EBO
I_C
I_CP (Note)
P_C *
T_j
T_stg
RATING
15
12
6
500
1
200
150
-55q150
UNIT
V
V
V
mA
A
mW


EQUIVALENT CIRCUIT (TOP VIEW)
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
I_CBO
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
h_FE
V_CE(sat)
f_T
Collector Output Capacitance
C_ob
TEST CONDITION
V_CB=15V, I_E=0
I_C=10ǺA
I_C=1mA
I_E=10ǺA
V_CE=2V, I_C=10mA
I_C=200mA, I_B=10mA
V_CE=2V, I_C=10mA, f_T=100MHz
V_CB=10V, I_E=0, f=1MHz
MIN.
-
15
12
6
270
-
-
-
TYP.
-
-
-
-
-
90
320
7.5
MAX.
100
-
-
-
680
250
-
-
UNIT
nA
V
V
V
-
mV
MHz
pF
Marking
2014. 3. 31
Revision No : 3
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