KTC802E Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
ᴌHigh Current.
ᴌLow V_CE(sat) .
: V_CE(sat)á´ª250mV at I_C=200mA/I_B=10mA.
ᴌComplementary to KTA702E.
MAXIMUM RATINGS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Note : Single pulse Pw=1mS.
* Total Rating.
V_CBO
V_CEO
V_EBO
I_C
I_CP (Note)
P_C *
T_j
T_stg
RATING
15
12
6
500
1
200
150
-55ᴕ150
UNIT
V
V
V
mA
A
mW
á´±
á´±
KTC802E
EPITAXIAL PLANAR NPN TRANSISTOR
B
B1
1
6
DIM MILLIMETERS
A
1.6+_ 0.05
2
5
A1
1.0 +_ 0.05
B
1.6+_ 0.05
B1
1.2 +_ 0.05
3
4
C
0.50
D
0.2+_ 0.05
H
0.5+_ 0.05
P
J
0.12+_ 0.05
P
P
5
1. Q1 EMITTER
2. Q₁ BASE
3. Q₂ COLLECTOR
4. Q₂ EMITTER
5. Q₂ BASE
6. Q₁ COLLECTOR
TES6
EQUIVALENT CIRCUIT (TOP VIEW)
6
5
4
Q1
Q2
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
I_CBO
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
h_FE
V_CE(sat)
f_T
C_ob
1
TEST CONDITION
V_CB=15V, I_E=0
I_C=10ỌA
I_C=1mA
I_E=10ỌA
V_CE=2V, I_C=10mA
I_C=200mA, I_B=10mA
V_CE=2V, I_C=10mA, f_T=100MHz
V_CB=10V, I_E=0, f=1MHz
MIN.
-
15
12
6
270
-
-
-
Marking
2
3
TYP.
-
-
-
-
-
90
320
7.5
MAX.
100
-
-
-
680
250
-
-
6
5
4
UNIT
nA
V
V
V
-
mV
MHz
pF
L Z ^{Type Name}
1
2
3
2002. 2. 20
Revision No : 1
1/3