KTC611T Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
ᴌExcellent h_FE Linearity
: h_FE(2)=25(Min.) at V_CE=6V, I_C=400mA.
ᴌComplementary to KTA511T.
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
V_CBO
35
Collector-Emitter Voltage
V_CEO
30
Emitter-Base Voltage
V_EBO
5
Collector Current
I_C
500
Emitter Current
I_E
-500
Collector Power Dissipation
P_C *
0.9
Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-55ᴕ150
* Package mounted on a ceramic board (600Ὅᴧ0.8Ὂ)
UNIT
V
V
V
mA
mA
W
á´±
á´±
KTC611T
EPITAXIAL PLANAR NPN TRANSISTOR
E
B
1
5
2
3
4
DIM
A
B
C
D
E
F
G
H
I
J
K
L
MILLIMETERS
2.9+_ 0.2
1.6+0.2/-0.1
0.70+_ 0.05
0.4+_ 0.1
2.8+0.2/-0.3
1.9+_ 0.2
0.95
0.16+_ 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
H
J
J
1. Q₁ BASE
2. Q₁, Q ₂ EMITTER
3. Q ₂ BASE
4. Q ₂ COLLECTOR
5. Q ₁ COLLECTOR
TSV
EQUIVALENT CIRCUIT(TOP VIEW)
5
4
Q1
Q2
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
I_CBO
Emitter Cut-off Current
I_EBO
DC Current Gain
h_FE(1) (Note)
h_FE(2) (Note)
Collector-Emitter Saturation Voltage
V_CE(sat)
Base-Emitter Voltage
V_BE
Transition Frequency
f_T
Collector Output Capacitance
C_ob
Note : h_FE(1) Classification 0:70ᴕ140, Y:120ᴕ240
h_FE(2) Classification 0:25Min., Y:40Min.
1
2
3
TEST CONDITION
V_CB=35V, I_E=0
V_EB=5V, I_C=0
V_CE=1V, I_C=100mA
V_CE=6V, I_C=400mA
I_C=100mA, I_B=10mA
V_CE=1V, I_C=100mA
V_CE=6V, I_C=20mA
V_CB=6V, I_E=0, f=1MHz
MIN.
-
-
70
25
-
-
-
-
TYP.
-
-
-
-
0.1
0.8
300
7.0
MAX.
0.1
0.1
240
-
0.25
1.0
-
-
UNIT
ỌA
ỌA
V
V
MHz
pF
Marking
5
h_FE Rank
Type Name
L
4
Lot No.
1
2
3
2002. 1. 24
Revision No : 1
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