KTC601U Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
A super-minimold package houses 2 transistor.
Excellent temperature response between these 2 transistor.
High pairing property in h_FE.
The follwing characteristics are common for Q₁, Q₂.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Rating
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C *
T_j
T_stg
RATING
60
50
5
150
30
200
150
-55 150
UNIT
V
V
V
mA
mA
mW
KTC601U
EPITAXIAL PLANAR NPN TRANSISTOR
B
B1
1
5
DIM MILLIMETERS
A
2.00+_ 0.20
2
A1
1.3+_ 0.1
B
2.1+_ 0.1
3
4D
B1
1.25+_ 0.1
C
0.65
D 0.2+0.10/-0.05
G
0-0.1
H
0.9 +_0.1
T
T 0.15+0.1/-0.05
G
1. Q₁ BASE
2. Q₁, Q ₂ EMITTER
3. Q ₂ BASE
4. Q ₂ COLLECTOR
5. Q ₁ COLLECTOR
USV
EQUIVALENT CIRCUIT (TOP VIEW)
5
4
Q1
Q2
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-EmitterSaturation Voltage
Transition Frequency
Collector Output Capacitance
I_CBO
I_EBO
h_FE (Note)
V_CE(sat)
f_T
C_ob
V_CB=60V, I_E=0
V_EB=5V, I_C=0
V_CE=6V, I_C=2
I_C=100 , I_B=10
V_CE=10V, I_C=1
V_CB=10V, I_E=0, f=1
Noise Figure
Note : h_FE Classification Y(4):120
NF
240, GR(6):200
V_CE=6V, I_C=0.1
400
, f=1
, Rg=10
Marking
5
1
2
3
MIN.
-
-
120
-
80
-
-
TYP.
-
-
-
0.1
-
2
1.0
MAX.
0.1
0.1
400
0.25
-
3.5
10
Type Name
4
UNIT.
V
L
h_FE Rank
2003. 2. 25
Revision No : 4
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2
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