KTC5242A Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – TRIPLE DIFFUSED NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
POWER AMPLIFIER APPLICATIONS.
FEATURES
High Collector Voltage : V_CEO=230V(Min.)
Complementary to KTA1962A.
Recommended for 80W High Fidelity Audio Frequency
Amplifier Output Stage.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation (Tc=25 )
Junction Temperature
Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
RATING
230
230
5
15
1.5
130
150
-55 150
UNIT
V
V
V
A
A
W
KTC5242A
TRIPLE DIFFUSED NPN TRANSISTOR
A
Q
B
K
D
d
PP
1 23
1. BASE
DIM MILLIMETERS
A
15.9 MAX
B
4.8 MAX
C
20.0+_ 0.3
D
2.0+_ 0.3
d
1.0+0.3/-0.25
E
2.0
F
1.0
G
3.3 MAX
H
9.0
I
4.5
T
MJ
2.0
K
1.8 MAX
L
20.5+_ 0.5
M
2.8
P
5.45+_ 0.2
Q
Φ3.2+_ 0.2
T
0.6+0.3/-0.1
2. COLLECTOR (HEAT SINK)
3. EMITTER
TO-3P(N)
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
I_CBO
I_EBO
V_(BR)CEO
h_FE (1) (Note)
h_FE (2)
V_CE(sat)
V_BE
f_T
Collector Output Capacitance
C_ob
Note : h_FE(1) Classification R:55 110 , O:80 160
TEST CONDITION
V_CB=230V, I_E=0
V_EB=5V, I_C=0
I_C=50mA, I_B=0
V_CE=5V, I_C=1A
V_CE=5V, I_C=7A
I_C=8A, I_B=0.8A
V_CE=5V, I_C=7A
V_CE=5V, I_C=1A
V_CB=10V, I_E=0, f=1MHz
MIN.
-
-
230
55
35
-
-
-
-
TYP.
-
-
-
-
60
0.4
1.0
30
200
MAX.
5.0
5.0
-
160
-
3.0
1.5
-
-
UNIT
A
A
V
V
V
MHz
pF
2004. 11. 26
Revision No : 0
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