KTC5103D_15 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
LOW COLLECTOR SATURATION VOLTAGE
LARGE CURRENT
FEATURES
hHigh Power Dissipation : P_C=1.3W(Ta=25)
hComplementary to KTA1385D
KTC5103D
EPITAXIAL PLANAR NPN TRANSISTOR
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse *
V_CBO
V_CEO
V_EBO
I_C
I_CP
Base Current
I_B
Collector Power
Ta=25
P_C
Dissipation
Tc=25
Junction Temperature
T_j
Storage Temperature Range
T_stg
* PW†10ms, Duty Cycle†50%
RATING
60
60
7
5
8
1
1.0
15
150
-55q150
UNIT
V
V
V
A
A
W


ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
*
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage *
I_CBO
I_EBO
h_FE(1)
h_FE(2) (Note)
h_FE(3)
V_CE(sat)
V_BE(sat)
V_CB=50V, I_E=0
V_EB=7V, I_C=0
V_CE=1V, I_C=0.1A
V_CE=1V, I_C=2A
V_CE=2V, I_C=5A
I_C=2A, I_B=0.2A
I_C=2A, I_B=0.2A
Turn On Time
t_on
Switching
Storage Time
t_stg
Time
Fall Time
t_f
* Pulse test : PW†50ǺS, Duty Cycle†2% Pulse
Note) h_FE(2) Classification : O:160q320, Y:200q400.
2013. 6. 26
Revision No : 4
MIN.
-
-
60
160
50
-
-
-
TYP.
-
-
-
-
-
0.1
0.9
0.2
MAX.
10
10
-
400
-
0.3
1.2
UNIT
ǺA
ǺA
V
V
1
-
1.1
2.5
ǺS
-
0.2
1
1/3