KTC5103D Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT)

SEMICONDUCTOR
TECHNICAL DATA
KTC5103D/L
EPITAXIAL PLANAR NPN TRANSISTOR
LOW COLLECTOR SATURATION VOLTAGE
LARGE CURRENT
FEATURES
High Power Dissipation : P_C=1.3W(Ta=25 )
Complementary to KTA1385D/L
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse *
Base Current
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
Collector Power
Dissipation
Ta=25
Tc=25
P_C
Junction Temperature
T_j
Storage Temperature Range
T_stg
* PW 10ms, Duty Cycle 50%
RATING
60
60
7
5
8
1
1.0
15
150
-55 150
UNIT
V
V
V
A
A
W
A
C
H
F
F
1
2
3
1. BASE
2. COLLECTOR
3. EMITTER
I
J
P
L
DIM
A
B
C
D
E
F
H
I
J
K
L
M
O
P
Q
MILLIMETERS
6.60 +_ 0.2
6.10 +_ 0.2
5.0 +_ 0.2
1.10+_ 0.2
2.70+_ 0.2
2.30+_ 0.1
1.00 MAX
2.30+_ 0.2
0.5+_ 0.1
2.00 +_ 0.20
0.50 +_ 0.10
0.91+_ 0.10
0.90+_ 0.1
1.00 +_ 0.10
0.95 MAX
DPAK
A
I
C
J
H
G
F
F
123
1. BASE
2. COLLECTOR
3. EMITTER
DIM MILLIMETERS
A
6.60+_ 0.2
B
6.10+_ 0.2
C
5.0 +_ 0.2
P
D
1.10+_ 0.2
E
9.50+_ 0.6
F
2.30+_ 0.1
G
0.76+_ 0.1
H
1.0 MAX
I
2.30+_ 0.2
J
0.5 +_ 0.1
L
K
2.0 +_ 0.2
L
0.50+_ 0.1
P
1.0 +_0.1
Q
0.90 MAX
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
*
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage *
I_CBO
I_EBO
h_FE(1)
h_FE(2) (Note)
h_FE(3)
V_CE(sat)
V_BE(sat)
V_CB=50V, I_E=0
V_EB=7V, I_C=0
V_CE=1V, I_C=0.1A
V_CE=1V, I_C=2A
V_CE=2V, I_C=5A
I_C=2A, I_B=0.2A
I_C=2A, I_B=0.2A
Turn On Time
t_on
Switching
Time
Storage Time
t_stg
Fall Time
t_f
* Pulse test : PW 50 S, Duty Cycle 2% Pulse
Note) h_FE(2) Classification : O:160 320, Y:200 400.
20µsec
INPUT ^IB1
I_B1
I_B2
I_B2
I_B1=-I _B2 =0.2A
DUTY CYCLE ^<= 1%
OUTPUT
V_CC =10V
IPAK
MIN.
-
-
60
160
50
-
-
TYP.
-
-
-
-
-
0.1
0.9
-
0.2
MAX.
10
10
-
400
-
0.3
1.2
1
UNIT
A
A
V
V
-
1.1
2.5
S
-
0.2
1
2003. 3. 27
Revision No : 3
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