KTC5027_15 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – TRIPLE DIFFUSED NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE AND HIGH RELIABILITY
HIGH SPEED SWITCHING, WIDE SOA
KTC5027
TRIPLE DIFFUSED NPN TRANSISTOR
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
V_CBO
Collector-Emitter Voltage
V_CEO
Emitter-Base Voltage
V_EBO
DC
I_C
Collector Current
Pulse
I_CP
Base Current
I_B
Collector Power Dissipation
(Tc=25)
P_C
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
1100
800
7
3
10
1.5
50
150
-55q150
UNIT
V
V
V
A
A
W


ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Sustaning Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Output Capacitance
Transition Frequency
I_CBO
I_EBO
V_CEX(SUS)
V_CE(sat)
V_BE(sat)
h_FE (1) (Note)
h_FE (2)
BV_CBO
BV_CEO
BV_EBO
C_ob
f_T
V_CB=800V, I_E=0
V_EB=5V, I_C=0
I_C=1.5A, I_B1=-I_B2=0.3A
L=2mH, Clamped
I_C=1.5A, I_B=0.3A
I_C=1.5A, I_B=0.3A
V_CE=5V, I_C=0.2A
V_CE=5V, I_C=1A
I_C=1mA, I_E=0
I_C=5mA, R_BE=ˆ
I_E=1mA, I_C=0
V_CB=10V, f=1MHz, I_E=0
V_CE=10V, I_C=0.2A
Turn On Time
t_on
Switching
Time
Storage Time
t_stg
Fall Time
t_f
Note : h_FE (1) Classification R:15q30, O:20q40
2008. 3. 26
Revision No : 1
MIN.
-
-
TYP.
-
-
MAX.
10
10
UNIT
ǺA
ǺA
800
-
-
V
-
-
-
-
15
-
8
-
1100
-
800
-
7
-
-
60
-
15
2
V
1.5
V
40
-
-
V
-
V
-
V
-
pF
-
MHz
-
-
0.5
-
-
3
ǺS
-
-
0.3
1/3