KTC4793_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – TRIPLE DIFFUSED NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
KTC4793
TRIPLE DIFFUSED NPN TRANSISTOR
POWER AMPLIFIER APPLICATIONS.
DRIVER STAGE AMPLIFIER APPLICATINS.
FEATURES
High Transition Frequency : f_T=100MHz(Typ.)
Complementary Pair with KTA1837.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
V_CBO
V_CEO
Emitter-Base Voltage
V_EBO
Collector Current
I_C
Base Current
I_B
Collector Power
Ta=25
P_C
Dissipation
Tc=25
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
230
230
5
1
0.1
2.0
20
150
-55 150
UNIT
V
V
V
A
A
W
A
S
E
L
L
M
D
D
NN
C
DIM MILLIMETERS
A
10.0+_ 0.3
B
15.0+_ 0.3
C
2.70 +_ 0.3
D 0.76+0.09/-0.05
E
Φ3.2 +_ 0.2
F
3.0+_ 0.3
G
12.0+_ 0.3
H
0.5+0.1/-0.05
J
13.6 +_ 0.5
R
K
3.7+_ 0.2
L
1.2+0.25/-0.1
M
1.5+0.25/-0.1
N
2.54 +_ 0.1
P
6.8+_ 0.1
Q
4.5 +_ 0.2
R
2.6 +_0.2
H
S
0.5 Typ
123
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
I_CBO
I_EBO
V_(BR)CEO
h_FE
V_CE(sat)
V_BE
f_T
Collector Output Capacitance
C_ob
TEST CONDITION
V_CB=230V, I_E=0
V_EB=5V, I_C=0
I_C=10mA, I_B=0
V_CE=5V, I_C=100mA
I_C=500mA, I_B=50mA
V_CE=5V, I_C=500mA
V_CE=10V, I_C=100mA
V_CB=10V, I_E=0, f=1MHz
MIN.
-
-
230
100
-
-
-
-
TYP.
-
-
-
-
-
-
100
20
MAX.
1.0
1.0
-
320
1.5
1.0
-
-
UNIT
A
A
V
V
V
MHz
pF
2007. 5. 22
Revision No : 0
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