KTC4793 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – TRIPLE DIFFUSED NPN TRANSISTOR(POWER AMPLIFIER DRIVER STAGE AMPLIFIER)

SEMICONDUCTOR
TECHNICAL DATA
KTC4793
TRIPLE DIFFUSED NPN TRANSISTOR
POWER AMPLIFIER APPLICATIONS.
DRIVER STAGE AMPLIFIER APPLICATINS.
FEATURES
High Transition Frequency : f_T=100MHz(Typ.)
Complementary Pair with KTA1837.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
V_CBO
V_CEO
V_EBO
I_C
I_B
Collector Power
Dissipation
Ta=25
Tc=25
P_C
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
230
230
5
1
0.1
2.0
20
150
-55 150
UNIT
V
V
V
A
A
W
A
U
E
L
L
M
D
D
NN
T
T
123
C
DIM MILLIMETERS
A 10.30 MAX
B 15.30 MAX
C
2.70Ź0.30
S
D
0.85 MAX
E Ѹ3.20Ź0.20
F
3.00Ź0.30
G 12.30 MAX
T
RH
0.75 MAX
J 13.60Ź0.50
K
3.90 MAX
L
1.20
V
M
1.30
N
2.54
O
4.50Ź0.20
P
6.80
Q
2.60Ź0.20
H
R
S
10Ɓ
25Ş
T
5Ş
U
0.5
V 2.60Ź0.15
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
I_CBO
I_EBO
V_(BR)CEO
h_FE
V_CE(sat)
V_BE
f_T
Collector Output Capacitance
C_ob
TEST CONDITION
V_CB=230V, I_E=0
V_EB=5V, I_C=0
I_C=10mA, I_B=0
V_CE=5V, I_C=100mA
I_C=500mA, I_B=50mA
V_CE=5V, I_C=500mA
V_CE=10V, I_C=100mA
V_CB=10V, I_E=0, f=1MHz
MIN.
-
-
230
100
-
-
-
-
TYP.
-
-
-
-
-
-
100
20
MAX.
1.0
1.0
-
320
1.5
1.0
-
-
UNIT
A
A
V
V
V
MHz
pF
2003. 2. 17
Revision No : 1
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