KTC4666_15 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
KTC4666
EPITAXIAL PLANAR NPN TRANSISTOR
LOW NOISE AMPLIFIER APPLICATION.
FEATURE
hHigh h_FE : h_FE=600q3600.
hNoise Figure : 0.5dB(Typ.) at f=100kHz.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
V_CBO
60
Collector-Emitter Voltage
V_CEO
50
Emitter-Base Voltage
V_EBO
8
Collector Current
I_C
150
Base Current
I_B
30
Collector Power Dissipation
P_C
200
Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-55q150
* Package mounted on 99.5% alumina 10mmƒ8mmƒ0.6mm
UNIT
V
V
V
mA
mA
mW


E
MBM
DIM MILLIMETERS
DA
2.00+_ 0.20
2
B
1.25+_ 0.15
1
3
C
0.90+_ 0.10
D 0.3+0.10/-0.05
E
2.10 +_ 0.20
G
0.65
P
H 0.15+0.1/-0.06
J
1.30
K
0.00~0.10
L
H
M
0.70
0.42 +_0.10
N
K
N
N
0.10 MIN
P
0.1 MAX
1. EMITTER
2. BASE
3. COLLECTOR
USM
Marking
h_FE Rank
Type Name
T
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
I_CBO
I_EBO
h_FE (1)(Note)
V_CB=50V, I_E=0
V_EB=8V, I_C=0
V_CE=6V, I_C=2mA
DC Current Gain
h_FE (2)
V_CE=5V, I_C=1mA
Collector-Emitter Saturation Voltage
Transition Frequency
h_FE (3)
V_CE(sat)(1)
V_CE(sat)(2)
V_CE(sat(3)
f_T
V_CE=10V, I_C=2mA
I_C=10mA, I_B=1mA
I_C=50mA, I_B=5mA
I_C=100mA, I_B=10mA
V_CE=10V, I_C=10mA
Collector Output Capacitance
C_ob
Noise Figure
NF (1)
NF (2)
Note : h_FE Classification A:600q1800 , B:1200q3600
V_CB=10V, I_E=0, f=1MHz
V_CE=6V, I_C=0.1mA,
f=100kHz, Rg=10kʃ
V_CE=6V, I_C=0.1mA,
f=1kHz, Rg=10kʃ
2008. 8. 29
Revision No : 4
MIN.
-
-
600
500
600
-
-
-
100
-
-
-
TYP.
-
-
-
-
-
0.05
0.07
0.12
250
3.5
0.5
0.3
MAX.
0.1
0.1
3600
3600
-
0.15
0.2
0.25
-
-
-
-
UNIT
ǺA
ǺA
V
V
V
MHz
pF
dB
1/3