KTC4666_08 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
LOW NOISE AMPLIFIER APPLICATION.
KTC4666
EPITAXIAL PLANAR NPN TRANSISTOR
FEATURE
High h_FE : h_FE=600 3600.
Noise Figure : 0.5dB(Typ.) at f=100kHz.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
60
50
8
150
30
200
150
-55 150
* Package mounted on 99.5% alumina 10mm 8mm 0.6mm
UNIT
V
V
V
mA
mA
mW
E
MB
M
DIM MILLIMETERS
D
A
2.00+_ 0.20
2
B
1.25 +_ 0.15
1
3
C
0.90 +_ 0.10
D 0.3+0.10/-0.05
E
2.10 +_ 0.20
G
0.65
H 0.15+0.1/-0.06
N
K
J
1.30
K
0.00-0.10
L
0.70
H
M
0.42+_ 0.10
N
0.10 MIN
N
1. EMITTER
2. BASE
3. COLLECTOR
USM
Marking
h_FE Rank
Type Name
T
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
I_CBO
I_EBO
h_FE (1)(Note)
h_FE (2)
V_CB=50V, I_E=0
V_EB=8V, I_C=0
V_CE=6V, I_C=2mA
V_CE=5V, I_C=1mA
h_FE (3)
V_CE=10V, I_C=2mA
V_CE(sat)(1) I_C=10mA, I_B=1mA
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
V_CE(sat)(2)
V_CE(sat(3)
f_T
C_ob
NF (1)
NF (2)
I_C=50mA, I_B=5mA
I_C=100mA, I_B=10mA
V_CE=10V, I_C=10mA
V_CB=10V, I_E=0, f=1MHz
V_CE=6V, I_C=0.1mA,
f=100kHz, Rg=10k
V_CE=6V, I_C=0.1mA,
f=1kHz, Rg=10k
Note : h_FE Classification A:600 1800 , B:1200 3600
2008. 8. 29
Revision No : 4
MIN.
-
-
600
500
600
-
-
-
100
-
-
-
TYP.
-
-
-
-
-
0.05
0.07
0.12
250
3.5
0.5
0.3
MAX.
0.1
0.1
3600
3600
-
0.15
0.2
0.25
-
-
-
-
UNIT
A
A
V
V
V
MHz
pF
dB
1/3