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KTC4527F Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – TRIPLE DIFFUSED NPN TRANSISTOR (HIGH VOLTAGE AND HIGH RELLABILITY HIGH SPEED SWITCHING, WIDE SOA)
SEMICONDUCTOR
TECHNICAL DATA
KTC4527F
TRIPLE DIFFUSED NPN TRANSISTOR
HIGH VOLTAGE AND HIGH RELIABILITY
HIGH SPEED SWITCHING, WIDE SOA
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation
(Tc=25á´±)
Junction Temperature
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Storage Temperature Range
Tstg
RATING
1100
800
7
3
10
1.5
40
150
-55ᴕ150
UNIT
V
V
V
A
A
W
á´±
á´±
A
U
E
L
L
M
D
D
NN
T
T
123
C
DIM MILLIMETERS
A
10.30 MAX
B
15.30 MAX
C
2.70Ź0.30
S
D
0.85 MAX
E
Ѹ3.20Ź0.20
F
3.00Ź0.30
G
12.30 MAX
T
RH
0.75 MAX
J
13.60Ź0.50
K
3.90 MAX
L
1.20
V
M
1.30
N
2.54
O
4.50Ź0.20
P
6.80
Q
2.60Ź0.20
H
R
10Ɓ
S
25Ş
T
5Ş
U
0.5
V
2.60Ź0.15
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
ICBO
Emitter Cut-off Current
IEBO
Collector-Emitter Sustaning Voltage
VCEX(SUS)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Output Capacitance
Transition Frequency
VCE(sat)
VBE(sat)
hFE (1) (Note)
hFE (2)
BVCBO
BVCEO
BVEBO
Cob
fT
TEST CONDITION
VCB=800V, IE=0
VEB=5V, IC=0
IC=1.5A, IB1=-IB2=0.3A
L=2mH, Clamped
IC=1.5A, IB=0.3A
IC=1.5A, IB=0.3A
VCE=5V, IC=0.2A
VCE=5V, IC=1A
IC=1mA, IE=0
IC=5mA, RBE=á´¬
IE=1mA, IC=0
VCB=10V, f=1MHz, IE=0
VCE=10V, IC=0.2A
Turn On Time
ton
Switching
Time
Storage Time
tstg
Fall Time
tf
Note : hFE (1) Classification R:15ᴕ30, O:20ᴕ40
20µS
IB1
INPUT IB1
IB2
IB2
I B1=0.4A , I B2 =-0.8A
DUTY CYCLE <= 1%
OUTPUT
200Ω
VCC =400V
2001. 4. 9
Revision No : 0
MIN.
-
-
800
TYP.
-
-
MAX.
10
10
UNIT
ỌA
ỌA
-
-
V
-
-
-
-
15
-
8
-
1100
-
800
-
7
-
-
60
-
15
2
V
1.5
V
40
-
-
V
-
V
-
V
-
pF
-
MHz
-
-
0.5
-
-
3
ỌS
-
-
0.3
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