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KTC4527 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – TRIPLE DIFFUSED NPN TRANSISTOR (HIGH VOLTAGE AND HIGH RELLABILITY HIGH SPEED SWITCHING, WIDE SOA)
SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE AND HIGH RELIABILITY
HIGH SPEED SWITCHING, WIDE SOA
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation
(Tc=25á´±)
Junction Temperature
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Storage Temperature Range
Tstg
RATING
1100
800
7
3
10
1.5
50
150
-55ᴕ150
UNIT
V
V
V
A
A
W
á´±
á´±
KTC4527
TRIPLE DIFFUSED NPN TRANSISTOR
A
R
S
D
T
L
C
C
MM
K
123
J
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
P
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
MILLIMETERS
10.30 MAX
15.30 MAX
0.80
Φ3.60 +_ 0.20
3.00
6.70 MAX
13.60+_ 0.50
5.60 MAX
1.37 MAX
0.50
1.50 MAX
2.54
4.70 MAX
2.60
1.50 MAX
1.50
9.50+_ 0.20
8.00+_ 0.20
2.90 MAX
TO-220AB
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
ICBO
Emitter Cut-off Current
IEBO
Collector-Emitter Sustaning Voltage
VCEX(SUS)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Output Capacitance
Transition Frequency
VCE(sat)
VBE(sat)
hFE (1) (Note)
hFE (2)
BVCBO
BVCEO
BVEBO
Cob
fT
TEST CONDITION
VCB=800V, IE=0
VEB=5V, IC=0
IC=1.5A, IB1=-IB2=0.3A
L=2mH, Clamped
IC=1.5A, IB=0.3A
IC=1.5A, IB=0.3A
VCE=5V, IC=0.2A
VCE=5V, IC=1A
IC=1mA, IE=0
IC=5mA, RBE=á´¬
IE=1mA, IC=0
VCB=10V, f=1MHz, IE=0
VCE=10V, IC=0.2A
Turn On Time
ton
Switching
Time
Storage Time
tstg
Fall Time
tf
Note : hFE (1) Classification R:15ᴕ30, O:20ᴕ40
20µS
IB1
INPUT IB1
IB2
IB2
I B1=0.4A , I B2 =-0.8A
DUTY CYCLE <= 1%
OUTPUT
200Ω
VCC =400V
2001. 4. 9
Revision No : 1
MIN.
-
-
800
TYP.
-
-
MAX.
10
10
UNIT
ỌA
ỌA
-
-
V
-
-
-
-
15
-
8
-
1100
-
800
-
7
-
-
60
-
15
2
V
1.5
V
40
-
-
V
-
V
-
V
-
pF
-
MHz
-
-
0.5
-
-
3
ỌS
-
-
0.3
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