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| KTC4512 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (HIGH POWER AMPLIFIER) | |||
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SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
FEATURES
á´Recommended for 30Wá´35W Audio Frequency
Amplifier Output Stage.
á´Complementary to KTA1726.
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation (Tc=25á´±)
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
RATING
80
80
6
6
3
50
150
-55á´150
UNIT
V
V
V
A
A
W
á´±
á´±
KTC4512
EPITAXIAL PLANAR NPN TRANSISTOR
A
R
S
D
T
L
C
C
MM
K
123
J
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
P
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
MILLIMETERS
10.30 MAX
15.30 MAX
0.80
Φ3.60 +_ 0.20
3.00
6.70 MAX
13.60+_ 0.50
5.60 MAX
1.37 MAX
0.50
1.50 MAX
2.54
4.70 MAX
2.60
1.50 MAX
1.50
9.50+_ 0.20
8.00+_ 0.20
2.90 MAX
TO-220AB
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
ICBO
IEBO
V(BR)CEO
hFE (Note)
VCE(sat)
fT
Collector Output Capacitance
Cob
Note : hFE Classification R:55~110, O:80~160.
TEST CONDITION
VCB=80V, IE=0
VEB=6V, IC=0
IC=25mA, IB=0
VCE=4V, IC=2A
IC=2A, IB=0.2A
VCE=12V, IC=0.5A
VCB=10V, IE=0, f=1MHz
MIN.
-
-
80
55
-
-
-
TYP.
-
-
-
-
-
20
150
MAX.
10
10
-
160
0.5
-
-
UNIT
á»A
á»A
V
V
MHz
pF
1999. 6. 24
Revision No : 0
1/3
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