KTC4419_07 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – TRIPLE DIFFUSED NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
KTC4419
TRIPLE DIFFUSED NPN TRANSISTOR
SWITCHING REGULATOR APPLICATION.
HIGH VOLTAGE SWITCHING APPLICATION.
HIGH SPEED DC-DC CONVERTER APPLICATION.
FEATURES
Excellent Switching Times.
: t_on=1.0 S(Max.), t_f=0.5 S(Max.) at I_C=1.5A.
High Collector Voltage : V_CEO=400V.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation (Tc=25 )
Junction Temperature
Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
T_stg
RATING
500
400
7
5
10
2
30
150
-55 150
UNIT
V
V
V
A
A
W
A
S
E
L
L
M
D
D
NN
C
DIM MILLIMETERS
A
10.0+_ 0.3
B
15.0+_ 0.3
C
2.70 +_ 0.3
D 0.76+0.09/-0.05
E
Φ3.2 +_ 0.2
F
3.0+_ 0.3
G
12.0+_ 0.3
H
0.5+0.1/-0.05
J
13.6 +_ 0.5
R
K
3.7+_ 0.2
L
1.2+0.25/-0.1
M
1.5+0.25/-0.1
N
2.54 +_ 0.1
P
6.8+_ 0.1
Q
4.5 +_ 0.2
R
2.6 +_0.2
H
S
0.5 Typ
123
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
I_CBO
I_EBO
V_(BR)CEO
h_FE(1)
h_FE(2)
V_CE(sat)
V_BE(sat)
f_T
V_CB=500V, I_E=0
V_EB=7V, I_C=0
I_C=10mA, I_B=0
V_CE=4V, I_C=0.1A
V_CE=4V, I_C=1.5A
I_C=1.5A, I_B=0.3A
I_C=1.5A, I_B==0.3A
V_CE=12V, I_C=0.3A
Switching
Time
Turn-on Time
t_on
20µS
OUTPUT
I_B1
INPUT
Storage Time
t_stg
I_B1
133Ω
I_B2
I_B2
Fall Time
t_f
I_B1=0.15A , I _B2=-0.3A
DUTY CYCLE ^<= 1%
V_CC =200V
MIN.
-
-
400
20
10
-
-
-
TYP.
-
-
-
-
-
-
-
20
MAX.
100
100
-
-
40
0.5
1.0
-
UNIT
A
A
V
V
V
MHz
-
-
1.0
-
-
2.5
S
-
-
0.5
2007. 5. 22
Revision No : 3
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