KTC4380_1 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE APPLICATION
FEATURES
hHigh Voltage : V_CEO=160V.
hLarge Continuous Collector Current Capability.
hRecommended for LED Drive Application.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
V_CBO
Collector-Emitter Voltage
V_CEO
Emitter-Base Voltage
V_EBO
Collector Current
I_C
Base Current
I_B
P_C
Collector Power Dissipation
P_C*
Junction Temperature
T_j
Storage Temperature Range
T_stg
* : Mounted on ceramic substrate (250mm² ƒ 0.8t)
RATING
160
160
6
1
0.5
0.5
1
150
-55q150
UNIT
V
V
V
A
A
W


KTC4380
EPITAXIAL PLANAR NPN TRANSISTOR
A
H
D
D
K
FF
123
C
G
DIM
A
B
C
D
E
F
G
H
J
K
MILLIMETERS
4.70 MAX
2.50 +_0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
1.50+_ 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
SOT-89
Marking
h_FE Rank
Type Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
I_CBO
V_CB=160V, I_E=0
I_EBO
V_EB=6V, I_C=0
V_(BR)CEO I_C=10mA, I_B=0
h_{FE (Note)} V_CE=5V, I_C=200mA
V_CE(sat)(1) I_C=100mA, I_B=10mA
V_CE(sat)(2) I_C=500mA, I_B=50mA
V_CE(sat)(3) I_C=120mA, I_B=2mA
V_BE
V_CE=5V, I_C=5mA
f_T
V_CE=5V, I_C=200mA
Collector Output Capacitance
C_ob
V_CB=10V, I_E=0, f=1MHz
MIN.
-
-
160
160
-
-
-
0.45
-
-
TYP.
-
-
-
-
0.05
-
0.13
-
100
15
MAX.
1.0
1.0
-
320
0.1
1.5
-
0.75
-
-
UNIT
ǺA
ǺA
V
-
V
V
V
V
MHz
pF
2010. 7. 13
Revision No : 3
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