KTC4380 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
KTC4380
EPITAXIAL PLANAR NPN TRANSISTOR
HIGH VOLTAGE APPLICATION
FEATURES
High Voltage : V_CEO=160V.
Large Continuous Collector Current Capability.
Recommended for LED Drive Application.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
P_C*
T_j
Storage Temperature Range
T_stg
* : Mounted on ceramic substrate (250mm² 0.8t)
RATING
160
160
6
1
0.5
0.5
1
150
-55 150
UNIT
V
V
V
A
A
W
A
H
D
D
K
FF
123
C
G
DIM
A
B
C
D
E
F
G
H
J
K
MILLIMETERS
4.70 MAX
2.50 +_0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
1.50+_ 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
SOT-89
Marking
hFE Rank
Lot No.
Type Name
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
I_CBO
V_CB=160V, I_E=0
I_EBO
V_EB=6V, I_C=0
V_(BR)CEO I_C=10mA, I_B=0
h_{FE (Note)} V_CE=5V, I_C=200mA
V_CE(sat)
I_C=500mA, I_B=50mA
V_BE
V_CE=5V, I_C=5mA
f_T
V_CE=5V, I_C=200mA
C_ob
V_CB=10V, I_E=0, f=1MHz
Note : h_FE Classification Y(2) : 160~320
MIN.
-
-
160
160
-
0.45
-
-
TYP.
-
-
-
-
-
-
100
15
MAX.
1.0
1.0
-
320
1.5
0.75
-
-
UNIT
A
A
V
V
V
MHz
pF
2010. 1. 6
Revision No : 0
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