KTC4379_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SEMICONDUCTOR
TECHNICAL DATA
POWER AMPLIFIER APPLICATIONS.
POWER SWITCHING APPLICATIONS.
FEATURES
Low Saturation Voltage
: V_CE(sat)=0.5V(Max.) (I_C=1A)
High Speed Switching Time : t_stg=1.0 S(Typ.)
P_C=1 2W (Mounted on Ceramic Substrate)
Small Flat Package.
Complementary to KTA1666.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
V_CBO
50
V_CEO
50
V_EBO
5
I_C
2
I_B
0.4
P_C
500
P_C *
1
T_j
150
Storage Temperature Range
T_stg
-55 150
P_C* : KTC4379 mounted on ceramic substrate (250mm²x0.8t)
UNIT
V
V
V
A
A
mW
W
KTC4379
EPITAXIAL PLANAR NPN TRANSISTOR
A
C
H
G
D
D
K
FF
1 23
DIM
A
B
C
D
E
F
G
H
J
K
MILLIMETERS
4.70 MAX
2.50 +_0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
1.50+_ 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
SOT-89
Marking
h_FE Rank
Type Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
Collector Cut-off Current
I_CBO
V_CB=50V, I_E=0
-
Emitter Cut-off Current
I_EBO
V_EB=5V, I_C=0
-
Collector-Emitter Breakdown Voltage
V_(BR)CEO
I_C=10mA, I_B=0
50
DC Current Gain
h_FE (1) (Note2) V_CE=2V, I_C=0.5A (Note 1)
70
h_FE (2)
V_CE=2V, I_C=1.5A (Note 1)
40
Collector-Emitter Saturation Voltage
V_CE(sat)
I_C=1A, I_B=0.05A (Note 1)
-
Base-Emitter Saturation Voltage
V_BE(sat)
I_C=1A, I_B=0.05A (Note 1)
-
Transition Frequency
f_T
V_CE=2V, I_C=0.5A
-
Collector Output Capacitance
C_ob
V_CB=10V, I_E=0, f=1MHz
-
Switching
Time
Turn-on Time
Storage Time
t_on
20µS
I_B1
I_B1
INPUT
t_stg
I _B2
I _B2
Fall Time
t_f
I_B1=-I _B2=0.05A
DUTY CYCLE _=< 1%
Note 1 : Pulse width 300 S, Duty Cycle 1%
Note 2 : h_FE(1) Classification 0:70 140, Y:120 240
OUTPUT
-
-
30V
-
TYP.
-
-
-
-
-
-
-
120
30
0.1
1.0
0.1
MAX. UNIT
0.1
A
0.1
A
-
V
240
-
0.5
V
1.2
V
-
MHz
-
pF
-
-
S
-
1998. 6. 15
Revision No : 2
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